Daily Archives: 2018年7月19日

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July 19, 2018

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

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8 years ago

TCAD-based Model Extraction Flow for GaN HEMT Devices – Part 1

TCAD-based Model Extraction Flow for GaN HEMT Devices This webinar will present a model parameter extraction methodology for GaN HEMT devices. This will include a review of the current SPICE