Testimonials

The analysis and characterization of stress effects have become an integral part of semiconductor technology and device design. In a typical semiconductor process flow the stresses are generated primarily due

OLEDs have been researched for application in display devices due to their considerable advantages. In order to further improve and optimize devices for practical applications, the electrical and optical parts

Since lighting is estimated to account for 20% of the world’s electricity consumption, the search for reliable and efficient lighting technologies to replace incandescent and fluorescent modules is intense.

The light source on short wavelenghts has been researched in GaN-based lser diodes (LDs). For high efficiency emitting devices, the wave-guide layer has been investigated to obtain more stable far

The addition of a chlorine species during thermal oxidation of silicon results in improved threshold stability, higher and more uniform oxide dielectric strength and improved junction properties due to lower

GaN heterojunction field effect transistors (HFETs) have been under extensive investigation because of their projected superb performances as high-power RF devices. The inherently high breakdown field arising from the wide

VICTORY Process is a tool for 3D simulation of the semiconductor industry’s technological processes. It allows stable and accurate modeling of the changes in a structure’s 3D geometry within etching

VICTORY Process is a 3D process simulation tool which allows for an accurate simulation of the doping distributions in semiconductor devices. It is able to simulate both the insertion of

The photovoltaic industry has rapidly grown since 2000 and has diversified in technology how the solar cell are manufactured. As of 2010, 70% of these cells were made from mono-

It is often the case when simulating charged coupled devices (CCDs) or image sensors, that a designer wishes to know how many electrons or holes are contained within an arbitrary

Anisotropic crystal etching is the common technique used in Micro Electromechanical systems (MEMS) manufacturing. It uses the property of some single crystal materials, like silicon, of having different etching rates

Developing ULSI silicon technology requires good control of dopant diffusion and minimizing defect formation during thermal oxidation. The use of high pressures of ambient gases can have a significant impact