Modelling of GaN/InGaN Tricolour Multiple Quantum Well Light Emitting Diodes

Since lighting is estimated to account for 20% of the world’s electricity consumption, the search for reliable and efficient lighting technologies to replace incandescent and fluorescent modules is intense.

GaN/InGaN quantum well based light emitting diodes (LED) produce light in the ultra violet to the green range. This material plays a vital role in the production of white light through the use of phosphours layers to obtain other wavelengths. This article focuses on the simulation of a triple quantum well GaN/InGaN structure with three emission peaks from wells of different thickness and molar fractions. This structure was published in Applied Physics Letters by Charash et. al. in 2009[1].