InGaN/GaN Ridge Type with MQW Laser Diode Simulation Using ATLAS

Introduction

The light source on short wavelenghts has been researched in GaN-based lser diodes (LDs). For high efficiency emitting devices, the wave-guide layer has been investigated to obtain more stable far field patterns and the multi-quantum well layers have been researched as a means of acheiving high quantum efficiency in blue-violet lasers.
In this paper, we demonstrate simulation results showing that the behavior of far field patterns depends on the transverse mode with 3 types of waveguide layers and also the quantum effects on the optical gain and the carrier distribution with the multi-quantum well layers.