Testimonials

SILVACO provides the tool ANSYSExporter which establishes the link between SILVACO software and ANSOFT ANSYS. ANSYSExporter is fully integrated within the SILVACO environment and can be called by means of

Organic light emitting diodes (OLEDs) have attracted great attention for full-color flat-panel displays since the demonstration of efficient electroluminescent devices [1]. Due to electrical doping of the electron and hole

In this paper, a physics based two dimensional (2-D) generic model of dual band mid wavelength and long wavelength infrared (MW-LW) photodetector based on HgCdTe has been reported. The paper

Q. How do I convert a value from one set of units into another? A. Use the DBINTERNAL CONVERT.UNITS command.

Meshing for process in ATHENA or electrical characterisation in ATLAS is one of the biggest challenges that a user faces. Poor meshing in both ATHENA and ATLAS can lead to

VICTORY Process, the 3D process simulator now includes a module for plasma etching. The module is designed to simulate plasma etching processes at the feature-scale size. The simulation in the

The Silvaco C-Interpreter (SCI) allows convenient and flexible definition of physical models and material parameters via an ANSI standard C-language interface. The SCI uses sophisticated techniques to assemble user defined

The degradation of MOSFET devices having relatively thin oxide layers is generally accepted as being mainly associated with the depassivation of silicon dangling bonds at the Si/SiO2 interface. These dangling

Virtual Wafer Fab’s powerful range of optimizers are used to investigate and minimise the coupled switching losses of a TCAD IGBT and its clamping diode in a chopper circuit. It

VICTORY Process is a 3D process simulation tool which employs the LevelSet technique for manipulating and deforming structures. The structure’s geometry is stored implicitly on the hierarchy of regular (constant

The trap states at the interface of Silicon with Silicon Dioxide are usually divided conceptually into interface states and fixed oxide charges [1]. These trap states can cause the degradation

The Insulated Gate Bipolar Transistor (IGBT), is a power device that combines the high-power characteristics of bipolar transistors with the fast-switching and voltage-drive characteristics of MOSFETs. It is used in