Testimonials

One of the most important features of TCAD simulation is that the TCAD tools encapsulate the physics of the processes or devices being studied. For the user, this can develop

The simulation of stress during device fabrication is becoming increasingly important and is often now deliberately introduced during fabrication to enhance device performance. The induced stress can take the form

VICTORY DEVICE simulation framework includes tools for 1D, 2D and 3D simulation of modern semiconductor technologies. VICTORY DEVICE implements a full tetrahedral meshing engine for fast and accurate simulation of

We show full 3-Dimensional (3D) electrical and optical simulation of a tunable silicon-based Photonic Crystal (PhC) Chromatic Dispersion Compensator (CDC) with high power efficiency and ultra-low power consumption (114nW), operating

Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Non-Volatile memory structures can be simulated using ATLAS. The basic principle of these devices is the use of a charge trapping Silicon Nitride layer embedded in the oxide

Q: How can I get a CV curve of a MOSFET? And how can I get the current on all terminals? A: There are two methods to get the CV

The formation of deep p- and n- wells using high-energy implantation has become an integral part of CMOS technology process flow. The high energy and high dose implantation into the

The formation of isolation trenches is one of the key process steps used in power device fabrication. Also the intensive scaling of modern semiconductor devices requires significant stress engineering to

The ion milling process is used extensively in the Hard Disc Drive industry, particularly in the manufacture of thin film magnetic heads. Ion milling is used to pattern many metal

GaN-based Hetero-Field Effect Transistors have been investigated in high power and high frequency electronics devices. However, such improved performance is still subject to influence of surface and buffer traps. The

This paper presents research efforts conducted at the IESUPM in the development of an accurate, physically-based solar cell model using the general-purpose ATLAS device simulator by Silvaco. Unlike solar cell

Introduction As MOS field-effect transistors are scaled down to a nanometer regime, quantum effects in both transverse and transport directions start playing a major role in determining device characteristics. In