Simulation Standard

The University of Florida SOI Group first released version 5.0 of UFSOI model in August 1999 and then in November 1999. To keep backward compatibility with previous versions, two model

Q: Usually, when I want to change the display of a drawing in the Drawing window, I select the Window pull-down menu in order to zoom in/out, pan, and fit.

One of the most useful features of the Scholar schematic capture is tight integration with the SmartSpice simulator. In effect, Scholar makes it possible to automatically generate SmartSpice netlist on

One of the main features of modern complex Computer-Aided Design Systems is the ability to support the communication between concurrently executing applications within the design process. This feature allows applications,

Q. How can I ensure that the vertical Y.MESH spacing in my process simulation is adequate for my particular implant condition? A. A good technique to check that the mesh

FastBlaze is an ultra-fast physical MESFET and HEMT simulator which incorporates advanced physical models. By designing the simulator and its framework specifically for these devices, Silvaco has optimized device simulation

For high temperature, high power applications Silicon Carbide (SiC) continues to be a useful material for device fabrication because of its wide band gap, high breakdown field, and high thermal

The Monte Carlo Binary Collision Algorithm (BCA) implant module in ATHENA was introduced in an earlier article [Simulation Standard Vol 10, #5, May 1999] which discussed the accuracy of the

A. UTMOST III SOI module has three routines for characterization of the parasitic BJTs of SOI devices. These routines are "IC/VCE", "Gummel" and "INT_BJT" All routines require to have 5

The latest VBIC bipolar model v1.2 of Sep 24 1999 has been integrated into SmartSpice and UTMOST III. It can be invoked by specifying the model selector LEVEL=5 and the