Simulation Standard

The C++ interface for Silvaco’s Expert layout tool, is now an exclusive customization language that expands the tool’s handling of high-level customization, such as a design application working with Expert’s

After I create my round curve and run a DRC check on my design, it comes up with hundreds of errors associated with curves. For example, I have the layer

The silicon germanium heterojunction bipolar transistor (SiGe HBT) is a promising technology for combining the operating speed of compound material devices with the production capability of bulk silicon. The presence

A new feature has been added to Silvaco's device simulator ATLAS, which allows the simulation of ohmic heating effects in metals using the Giga or Giga3D modules. The feature has

Impact ionization plays an important role in the design of many semiconductor devices. Since impact ionization is both temperature and electric field dependent, it is important to use a model

ATLAS may be used to study these effects. A standard experiment for studying recombination in silicon is the transient decay of photoexcited carriers - known as the Stephenson-Keyes method for

BSIM3SOI version 3.0 model was released on May 2002 by UC Berkeley. This model includes both Partially and Fully depleted models. This model is now implemented in SmartSpice and can

HiSIM is based on a charge-sheet model. IDS current is described using only one equation, and there-fore is continuous over the whole range of operating regions. This improves MOSFETs modeling

HiSIM is a MOSFET model for SPICE circuit simulation that has been developed by Hiroshima University and STARC Company. This model present several advantage on the extraction point of view,

The input impedence of most network analyzers are around 1 MOhm, which is relatively small. Due to this low impedence the leakage current on the Base port (Typically Port1) becames