Simulation Standard

Stress effect models are now implemented in major models such as BSIM4 or HiSIM. The need for evermore accurate models with a strong relation to technology is accute. Since BSIM3v3

Philips MOS20 was released in January 2004. Its purpose is to provide a high-voltage compact model to describe both operation of the channel region and drift region under the thin

Q: Sometimes I have problem to skip cells when importing cells with the same names from reference library. Once we skip one cell, expert will complain other cells already exist

1. Introduction This article begins a series of articles that describe the compatibility of Guardian DRC system[1] in terms of functionality: command set, syntax and implementation with other leading industrial

Expert schematic driven layout (SDL) is a CAD tool which increases the productivity of layout design by automating cell generation and providing visual cues to assist the wiring process. In

1. Abstract Parameterized cells (P-cells) significantly increase the productivity of layout designers. Silvaco International’s tool Expert has been designed to aid layout designers through its ability to support and manipulate

Introduction This article introduces the new features and numerical schema implemented in the most recent release of Clever from Silvaco. In this new release, both memory handling and simulation time

Q. Is there a way to automatically specify mesh spacing in ATHENA? A. Yes, there are three ways to automatically specify grid spacing. The most preferred method is described below

1. Introduction The topography simulation module, Elite has constantly been improved in order to simulate advanced processes, which are becoming more complex with device miniaturization and further integration of VLSI

Polysilicon thin film transistors are attractive as active devices in driver circuits of highly integrated active-matrix liquid crystal displays (AMLCDs) and as p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) in static