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2019

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

7 years ago

SmartSpice Does It Smart

By this definition, any SPICE simulator qualifies as a smart design tool, but what about versatility? SmartSpice has had over 30 years of product development and is the Swiss Army

7 years ago

AI 및 머신러닝 SoC – 메모리와 인터커넥트 IP 관점

2018년 12월 7일 | 시각: 3:00am-3:30am (한국 시각) 인공지능(AI)과 머신러닝(ML) 기반 SoC의 개발 과제를 논의합니다.

On-Chip 변동 및 완결 플로우: 산업적 관점

2019년 10월 11일 | 2:00am-2:30am (한국 시각) 반도체 기술이 발전함에 따라 on-chip 변동의 영향이 커지며, 이는 보다 정교한 솔루션이 필요하다는 것을 의미합니다. 따라서, 가능한 생산 시간 및 비관적인 관점을 줄이는

7 years ago

Maverick: Hierarchical Netlist Extractor for PC Platforms

Diamond is considered to be the ultimate semiconductor material for high power and high frequency devices due to its superior electrical and thermal properties, such as high breakdown field, high

7 years ago

실바코, TSMC Open Innovation Platform® Ecosystem Forum에 참가

2019-09-18

7 years ago

실바코와 HDL Design House가 제휴하여, 아날로그 및 디지털 IC 디자인 서비스를 제공

2019-09-16

7 years ago

The Need for Advanced Wide Bandgap Power Electronics

PowerAmerica’s strategic roadmap for next generation wide bandgap (WBG) power electronics (PE) came out earlier this year. The public version of the roadmap includes a background/introduction and market forecast pertaining

7 years ago

Next Generation CMOS Nanowire: From Atoms to Circuit Simulation

Abstract— A complete simulation flow for a Nanowire-based ring oscillator circuit is presented, where the active devices were simulated using an atomistic device simulator. The results of this simulation have

7 years ago

3D TCAD Simulation for Power Devices

y first IC design back in 1978 was a DRAM and it ran on 12V, 5V and -5V, but then my second DRAM was using only a 5V supply. Today

7 years ago

Optimization of Select Gate Transistor in Advanced 3D NAND Memory Cell

Abstract—There are several device challenges unique to the select gate transistor in 3D NAND memory cell. It requires low leakage current to prevent read and program disturb problems and it