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Simulation Standard
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
23 years ago
Highlighting Two Nodes in the Expert Layout Editor and Other Tips
Q: I would like to highlight two nodes at the same time in Expert. I currently use Verification->Node Probing->Pick Node to highlight a node, but I donít see how I
23 years ago
The Effect of Carrier Spilling on Spreading Resistance Profiling (SRP) Accuracy
Spreading Resistance Profiling (SRP) retains its popularity in the semiconductor industry by an inexpensive means of capturing dopant profile information. However, device engineers often incorporate SRP data into process simulation
23 years ago
Eye Diagram for a Direct Modulated Semiconductor Laser in ATLAS
An eye diagram is a convenient way to visualise how the waveforms used to send multiple bits of data can potentially lead to errors in the interpretation of those bits.
23 years ago
Analysis of Light Power Dependence on the Leakage Current in a Buried Hetero- Structure p-InP Semiconductor Laser
An effective device structure for reducing leakage current in BH laser diodes with semiin-sulation doped Fe in InP blocking layers has been analyzed [3]. In this study, the leakage current
23 years ago
Generation of III-Nitride Transport Parameters with Mocasim
Mocasim is an advanced three-valley Monte Carlo simulator designed to generate the transport parameters used in Silvaco’s physical device simulators. It accurately calculates the material transport parameters of both direct
23 years ago
EXACT Worksheet Utility to View Variables and Data
Q: EXACT has powerful scripting utilities for manipulating the final capacitance data and variables but is there an easier graphical front end that would also allow me to view the
23 years ago
HiSIM V1.2 Model Parameter Extraction with UTMOST-III
HiSIM (Hiroshima university STARC IGFET Model) is one of the surface potential based Spice models [1], [2] and pioneered the iterative approach to obtain the surface potential applicable in compact
23 years ago
Shallow-Trench-Isolation (STI) Effects in BSIM4 and HiSIM MOSFET Models in SmartSpice & UTMOST-III
There are several ways to account for the effect of STI-induced stress in standard compact models. The purpose of this article is to present two different approaches developed by the
23 years ago
Behavioral Modeling of PLL Using Verilog-A with SmartSpice
In this article, we describe practical behavioral modeling for highly non-linear circuits using Verilog-A, which is analog extension of Verilog-AMS. At first, we describe behavioral modeling techniques for phase/frequency detectors
23 years ago
Using Binned Device Models with SmartSpice
Q. My simulation fails because SmartSpice cannot find a binned model, what does this mean?