Casey Molver

ATLAS may be used to study these effects. A standard experiment for studying recombination in silicon is the transient decay of photoexcited carriers - known as the Stephenson-Keyes method for

BSIM3SOI version 3.0 model was released on May 2002 by UC Berkeley. This model includes both Partially and Fully depleted models. This model is now implemented in SmartSpice and can

HiSIM is based on a charge-sheet model. IDS current is described using only one equation, and there-fore is continuous over the whole range of operating regions. This improves MOSFETs modeling

HiSIM is a MOSFET model for SPICE circuit simulation that has been developed by Hiroshima University and STARC Company. This model present several advantage on the extraction point of view,

The input impedence of most network analyzers are around 1 MOhm, which is relatively small. Due to this low impedence the leakage current on the Base port (Typically Port1) becames

A new version of Savage DRC system taps the full power of multiprocessor computers by introducing simultaneous execution of DRC commands from a DRC deck. A DRC deck is a

Silvaco Data Systems announces the release of CELEBRITY CAD suite: Expert layout editor, Savage DRC system and Guardian LVS for Linux platform.

It is well-known that parasitic effects are no longer negligible for modern integrated circuit technology. Among the most important parasitic effects limiting the chip performance are interconnect related problems like

To provide uniform etching of metal, dummy metal rectangles can be placed over an unused area of the chip. The following script generates dummy layer with a full array of

Q: How can I cut exactly the same hole in many layers? Q: How to skip a single layer during stream-out? Q: How to do filler boxes in Expert?

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This model is based on the usual pair diffusion mechanism including non-equilibrium reactions between the

Interest continues to grow in the development of high electron mobility transistor (HEMT) technologies for micrometer and millimeter wave power applications. A primary concern of device designers working with such