25 years ago
The Gate-All-Around SOI transistor [1], in which the gate oxide and the gate electrode are wrapped around the semiconductor region between the source and drain electrodes, exhibits very attractive features
25 years ago
Installing and using Silvaco TCAD tools on a Windows 2000 Machine Introduction Silvaco software supports licensing on Windows NT (Serverice Pack 4. or later) and Windows 2000 Pro. As a
25 years ago
The Modella lateral PNP bipolar model was developed by Philips Electronics N.V. and first released to the public domain in 1990 [1,2]. A release of this model has been implemented
25 years ago
So far the BSIM3v3.2 MOSFET model, developed by UC-Berkeley, has been considered as the industry standard model for deep-submicron CMOS design. It was rapidly adopted by IC companies and foundries
25 years ago
Optimization is the task of finding the absolute best set of admissible conditions to achieve your objective, formulated in mathematical terms. The goal of optimization is, given a system, to
25 years ago
The BSIM4_FI routine in UTMOST III MOS module should be used for data collection and BSIM4 SPICE model parameter extraction. The BSIM4_FI routine features are similar to the BSIM3_MG routine.
26 years ago
An IC layout has to satisfy many technological design requirements. One of these is spacing, i.e., a layout object has to be separated from another one by some minimal distance.
26 years ago
Most of recent improvements in Expert, Savage, Guardian and Maverick are aimed at the enhancement of the usability of these tools. All features described are developed according to the requests
26 years ago
Virtually all latest and prospective enhancements of Expert Layout processor (for example, semi-automatic floorplanning) are based on sophisticated geometrical models. In some cases some advanced mathematical research is necessary to
26 years ago
If I try to close a project, Expert gives me a prompt: "Save changes in a project?", but I remember that I didn't do any editing of cells. When can
26 years ago
The low temperature operation of many device structures has been shown as an effective method for improving device performance without reducing device size. By modeling low temperature phenomena, numerical simulation
26 years ago
This article will present the simulation methodology of a self-aligned double-gate MOSFET structure (FinFET) using SILVACO 3-D simulation suite. The double-gate MOSFET is one of the most attractive alternative to