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February 27, 2024

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

3 years ago

Learn How STMicroelectronics Silicon Carbide (SiC) Research Team uses Silvaco TCAD to Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices

March 28, 2024 During SiC device switching operations, it is possible that devices could be reaching abnormal overload conditions, which is why some applications require “robustness” specifications (e.g.,

3 years ago

Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects

This paper presents a TCAD modeling approach for HfO2-based ReRAM (Resistive Random Access Memory). For describing the switching and retention behaviors of a ReRAM cell, the proposed model includes the