Q: How can I cut exactly the same hole in many layers? Q: How to skip a single layer during stream-out? Q: How to do filler boxes in Expert?

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This model is based on the usual pair diffusion mechanism including non-equilibrium reactions between the

Interest continues to grow in the development of high electron mobility transistor (HEMT) technologies for micrometer and millimeter wave power applications. A primary concern of device designers working with such

This article presents a standard case of transmission line: the microstrip structure. First, the structure is described and then the results extracted from QUEST are compared with measurements. We thank

ATLAS allows the user to define a contact with a number of different boundary conditions; ohmic, Schottky, current controlled, floating or reflecting. The Schottky contact boundary condition realizes that at

We give in this article an introduction to the Verilog-A SmartSpice interface. This new feature in SmartSpice allows the user to write their own physical models in the Verilog-A language.

Ramtron International Corporation has developed a ferroelectric capacitance model with a new concept of double distributions of domain reversal voltages.

Acknowledging the need for more flexibility, SmartSpice now provides three numerical methods for linear system solution. The additional solvers provide for greater capacity by minimizing memory requirements and reducing the

The BSIM4 model provides a RF CMOS modeling capability. Prior to the BSIM4 model the RF modeling was accomplished by using macro models. The macro models were complex, contained many

It is well known that analyzing LVS reports is often a difficult and brain-teasing task because the "global" nature of connectivity. Unlike DRC reports, where geometrical violations are usually restricted