Yearly Archives: 2002
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2002
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
24 years ago
Real-time DRC Verification by DRC Guard
DRC Guard Performs "real-time" DRC on Expert Layout Editor. DRC Guard’s real-time design rule check (DRC) verifies entered or modified objects after the objects are edited. DRC Guard detects and
24 years ago
Actual Examples of Creating Parameterized Cells
Silvaco’s Expert tool is an extremely powerful layout-editing tool that supports features related to parameterized cells. Parameterized cells, often called P-cells, increase designer productivity by adding enormous flexibility and efficiency
24 years ago
Connectivity Operations in Guardian DRC
The article "Connectivity options for DRC spacing check operations in Guardian" (Simulation Standard, vol. 11, no. 12) [1] describes layout netlist connectivity based on DRC checks. Earlier versions of Silvaco
24 years ago
How does Snap-to-grid Works for Cell Instances
We have lots of cells that become off-grid when we do cut-and-paste from other cells. We tried to use the "Tools->Snap Selected to Grid" command, but the cell doesn't get
24 years ago
Simulation of Single-Event Effects in FinFETs Using the ATLAS Device Simulator
A great deal of recent industry attention has focused on the use of non-planar multi-gate device structures in future generation MOS devices that feature channel lengths below about 50 nm
24 years ago
Simulation of a Double Ridge Edge Emitting InGaAsP/InP MQW Laser
In order to investigate the influence of ridge separation on the transverse optical modes of a double ridge edge multiple quantum well (MQW) emitting laser, we have designed a generic
24 years ago
Quantum Modeling Part I: Poisson-Schrodinger Solver
The trend toward smaller MOSFET devices with thinner gate oxide and greater doping is resulting in the increased importance of quantum mechanical effects, which are observed as shifts in threshold
24 years ago
Simulation of a High Gain InP/InGaAs/InP Double HBT with Varying Doping Profile within ATLAS
It is possible to now create new heterojunction and double heterojunction bipolar transistors [2] utilizing junction layers made of different heterojunction semiconductor materials. Typically a heterojunction bipolar transistor (HBT) consists
24 years ago
Order of Multiple Implants in a Process Affects Results
When an implant occurs there will be some level of damage to the crystal structure of the silicon. If this damage is not annealed out then any subsequent implant will
24 years ago
Temperature Effects in SmartSpice LEVEL=6 Ferroelectric Capacitance Model From Ramtron
Implementation of a new ferroelectric capacitance model from Ramtron International Corporation into SmartSpice was first described in the April 2002 issue of Silvaco Simulation Standard. This model utilizes a new