Home » Simulation Standard » 第53页
Simulation Standard
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
28 years ago
HINTS & TIPS – October 1998
The HP4155/56 DC Analyzer can be configured with SMU and Pulse Generator expander box frame called HP41501A. The expander box can have different measurement unit options.
28 years ago
SPAYN Recent Developments
An important aspect of statistical process control in IC production is the ability to predict circuit performance variation in the manufacturing process. Two new features in SPAYN allow the user,
28 years ago
Scholar
The debut of Silvaco's new schematic editor, Scholar, is drawing closer. Scholar is a sophisticated design tool which derives its power and flexibility from the fact that it is built
28 years ago
PHILIPS Model 9
In collaboration with STMicroelectronics Central R&D at Crolles (France), a new routine has been developed in UTMOST III to provide a complete solution for MOS Philips Model 9 parameter extraction.
28 years ago
Parallel .ALTER Statements in SmartSpice
The .ALTER statement is designed to allow a SPICE input deck to be re-run with a change in a single parameter. This feature is especially useful in characterization. For this
28 years ago
HINTS & TIPS – September 1998
I run DRC, find one-two violations, correct them, then I re-run DRC to check whether my corrections worked. However re-running on the whole design is time-consuming. How can I run
28 years ago
Recursive Cutting of Rectangular Partitions for VLSI Floorplanning
Rectangular partitionings form a mathematical base for many modern approaches to automation of VLSI design [1-3]. In particular, popular methodologies of hierarchical placement (by cell grouping / merging) as well
28 years ago
Real-time DRC in Expert Layout Editor
In this paper we introduce one of the latest and most advanced features of Silvaco's Expert Layout processor for Windows NT DRC Guard. DRC Guard is fully functional real-time
28 years ago
HINTS & TIPS – August 1998
When using the analytical implant tables in ATHENA the default model for the lateral implant range assumes a gaussian profile with a standard deviation equal to the vertical standard deviation
28 years ago
Simulating Redeposition During Etch Using a Monte Carlo Plasma Etch Model
The shrinking critical dimensions of modern technology place a heavy requirement on optimizing the etching of narrow mask opening. In addition the aspect ratio of etches has been increased requiring