Simulation Standard

Abstract This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the

In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain–current dispersion effects are investigated when gate or drain voltages are pulsed. Gate-lag and

Introduction The trend toward ultra-short gate length MOSFET requires a more and more effective control of the channel by the gate leading to new architecture like double-gate, tri-gate, omega-gate, and

How Can I significantly Reduce Circuit Parasitics Netlist Extraction Time?

Introduction It is widely believed that the scaling of standard Flash devices will face in a near future several limitations, due to the high voltage requirement of the program/erase and

Abstract In this paper we present an original semi-analytical model for the subthreshold electrical behavior of complex 3D structures as the SOI FinFLASH devices. This physically-based model, which does not

Q. Is it possible to calculate the resistance components of a MOSFET (i.e. channel resistance, epi resistance, substrate resistance etc.) as a function of gate bias?

Introduction The physical verification is becoming the most complex phase raised by the Deep SubMicron (DSM) technology. More than 50% of the design time is dedicated to the verification. With

Introduction The trend toward smaller MOSFET devices with thinner gate oxide and greater doping is resulting in the increased importance of quantum mechanical effects, which are observed as shifts in

Introduction Erasable programmable read-only memory (EPROM) devices include amongst others, floating gate technology and SONOS (Polysilicon-Oxide-Nitride-Silicon) technology. Floating gate technology involves charge being stored in the polysilicon floating gate as