14 years ago
Actuation Voltage For a Cantilever Switch in MEMS
Following the successful 3D simulation of the process flow of cantilever based MEMS switches using VICTORY Process is presented in August 2005 Simulation Standard article “Process Flow Simulation and Manufacture”,
15 years ago
Current Collapse Phenomenon in GaN HFETs resulting from Intentional Bulk Iron (Fe) Doping and Un-intentional Interface Traps
The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate for semiconductor device fabrication. These properties include: High saturation velocities and breakdown field strength Direct
15 years ago
Syntax Driven 2D Structure Export from 3D Structures and Extraction of 2D Volume Data Maps
This article demonstrates a new feature of TonyPlot3D. This feature enables the automated, syntax driven export of 2D structure slices from 3D structures. Also demonstrated in this article is the
15 years ago
Leakage Current Calibration Procedures of Amorphous Silicon Thin-Film Transistors
Amorphous silicon Thin-Film Transistors (a-Si TFTs) are widely used as the switching device of liquid crystal display (LCD) technology. For development and analysis of a-Si TFTs, many research groups are
15 years ago
3D TFT Simulation
Both flexible and touch panel displays have become popular for portable applications. To meet various functional requirements, system-on-panel (SOP) design has become essential [1] and different layouts as well as
15 years ago
The Studies of Anti-Reflective (AR) Coatings Effects for Solar Cell by Using Silvaco TCAD Tools
In 1975, screen printing was first applied to solar cells for the formation of the front and rear contacts replacing expensive vacuum metallization [1]. The encapsulate used in a photovoltaic
15 years ago
Geiger Mode Simulation of Avalanche Photodiodes in ATLAS
Single-photon counting detectors are used in a wide range of applications, including astronomy, optical communications, biological sensors, and military uses. Photomultiplier tubes (PMTs) have fulfilled these needs in the past.
15 years ago
ZnO based LED: A Performance Optimization through TCAD Simulation
In this paper, a two dimensional (2-D) generic model of quantum well light emitting diode (LED) based on ZnO, II-VI compound semiconductors has been reported. The structure has been designed
15 years ago
Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer
To break through the material limits of Silicon and to realize the drastic performance improvement needed to meet the severe requirements in the future, wide bandgap semiconductors such as SiC
15 years ago
Simulation of Stresses and Mobility Enhancement Factors in 3D Inverter Cell
The analysis and characterization of stress effects have become an integral part of semiconductor technology and device design. In a typical semiconductor process flow the stresses are generated primarily due