13 years ago
Hints, Tips and Solutions – Illuminate a 3D device in a Victory Device Opto-electronic Simulation
A: The 2 basic commands needed to illuminate a structure in Victory Device are BEAM and SOLVE. A single (or multiple) BEAM statement(s) are specified containing the light source properties.
13 years ago
Atlas Simulation of GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept
Wide-bandgap semiconductors such as SiC and GaN have attracted much attention because they are expected to break through the material limits of silicon. In particular, AlGaN/GaN HEMTs are generally promising
13 years ago
Modeling the Optical Response of Phonon-dressed Excitons in OLED Simulations
We demonstrate the modeling of optical response of exciton-polarons based on the well established Holstein Hamiltonian to model coupled exciton-phonon systems in organic molecular chains. Our approach uses Green’s functions
13 years ago
Hints, Tips, and Solutions – Simulate Rapid Thermal Annealing Temperature Transients in Vacuum
When a wafer is clamped only at its edges and is heated with an infra-red source in a vacuum, the majority of the heat loss occurs through black body radiation.
13 years ago
Atlas Simulation of a Wide Bandgap Gallium Oxide (Ga2O3) MOSFET
Single-crystal gallium oxide (Ga2O3) has attracted increasing attention as a promising material for power device applications. It possesses excellent material properties and has the potential for mass productivity of low-cost
13 years ago
Simulation of a DBR Edge Emitting Laser with External Air Gap Tuning Mirror
A methodology for simulating an edge emitting laser is demonstrated that incorporates a distributed Bragg Reflector (DBR) as one of the mirrors, with the other being a variable air gap
13 years ago
Anode Shorts Layout Dependence of Bi-mode IGBT (BiGT) On-state Characteristics
A new class of high-voltage semiconductor devices, known as a reverse conducting IGBT (RC-IGBT), has emerged in recent years from research efforts to diminish the usage of external anti-parallel free-wheeling
13 years ago
Hints, Tips and Solutions – Compare the Results of Breakdown Simulations with Hatakeyama’s Impact Ionization Model for 4H-SiC Based Power Devices
In a 4H-SiC crystal, the stacking sequence of a Si-C bilayer plane extends along the crystallographic c-axis direction, also referred to as the direction (see Figure 1). With regard to
13 years ago
2D IBC-SHJ Solar Cell Simulation and Optimization
Interdigitated back contact silicon heterojunction (IBC-SHJ) combines the advantages of interdigitated back contact (IBC) and silicon heterojunction (SHJ) solar cells. Having all the contacts at the back of the cell
13 years ago
State of the Art 2D and 3D Process and Device Simulation of GaN-Based Devices
Silicon has long been the semiconductor of choice for high-voltage power electronics applications. However, wide-bandgap semiconductors such as SiC and GaN have begun to attract attention because they are projected