Daily Archives: 2021年10月1日
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October 1, 2021
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
5 years ago
Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT
Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the
