Abstract— A complete simulation flow for a Nanowire-based ring oscillator circuit is presented, where the active devices were simulated using an atomistic device simulator. The results of this simulation have

Abstract—There are several device challenges unique to the select gate transistor in 3D NAND memory cell. It requires low leakage current to prevent read and program disturb problems and it

In this paper, in order to understand trap-rich substrate behavior, passive and active device on SOI with trap-rich layer structures were simulated using the Victory Device simulator. Harmonics distortion of

Introduction Diamond is considered to be the ultimate semiconductor material for high power and high frequency devices due to its superior electrical and thermal properties, such as high breakdown field,