Daily Archives: 2010年4月1日
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April 1, 2010
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
17 years ago
Simulating the Hysteresis effects of Si/SiO2 Interface Traps
The trap states at the interface of Silicon with Silicon Dioxide are usually divided conceptually into interface states and fixed oxide charges [1]. These trap states can cause the degradation
17 years ago
Designing a High-Voltage IGBT Structure with TCAD
The Insulated Gate Bipolar Transistor (IGBT), is a power device that combines the high-power characteristics of bipolar transistors with the fast-switching and voltage-drive characteristics of MOSFETs. It is used in
17 years ago
Investigation of the SiGe Waveguide Photodiodes Using FDTD Method for High Speed Optical Communication
Silicon as a photonic medium has unique advantages in telecommunication systems. It is transparent in the range of optical telecommunications wavelength (1.3 and 1.55 um) and has a high index