April 1, 2010

The trap states at the interface of Silicon with Silicon Dioxide are usually divided conceptually into interface states and fixed oxide charges [1]. These trap states can cause the degradation

The Insulated Gate Bipolar Transistor (IGBT), is a power device that combines the high-power characteristics of bipolar transistors with the fast-switching and voltage-drive characteristics of MOSFETs. It is used in

Silicon as a photonic medium has unique advantages in telecommunication systems. It is transparent in the range of optical telecommunications wavelength (1.3 and 1.55 um) and has a high index