May 1, 2007

Abstract This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the

In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain–current dispersion effects are investigated when gate or drain voltages are pulsed. Gate-lag and

Introduction The trend toward ultra-short gate length MOSFET requires a more and more effective control of the channel by the gate leading to new architecture like double-gate, tri-gate, omega-gate, and