We describe here two approaches to model the quantum effects that can no more be neglected in actual and future devices. These models are the Schrödinger-Poisson and Density-Gradient methods fully

To illustrate the use of this statement to find depletion widths we have used the standard MOSFET example mos1ex01.in to first create the structure. Then the drain voltage was swept

1. Introduction The Exact analysis stage extracts the user-required information necessary for the respective parasitic capacitances by probing the Exact database. This is performed via script files written in LISA

Introduction In response to high demand, device designers are developing silica microlenslets that offer efficient coupling between optical fiber bundles and arrays of photodetectors, LEDs, or VCSELs. Microlenslet design involves

A new parallelization method has been implemented into SmartSpice. Now .ALTERs can be destributed not only over several CPUs (by using -P option), but over a network of computers as

In all previous versions of SmartSpice the model code (BSIM, diode etc.) was included in the one executable (SmartSpice ). This means any updates to the model code would take

The Verilog-A hardware description language opens many areas to SPICE users in the field of compact models, allowing manufacturers and universities to study or customize the existing models.

Stress effect models are now implemented in major models such as BSIM4 or HiSIM. The need for evermore accurate models with a strong relation to technology is accute. Since BSIM3v3

Philips MOS20 was released in January 2004. Its purpose is to provide a high-voltage compact model to describe both operation of the channel region and drift region under the thin