Yearly Archives: 2004
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2004
Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.
22 years ago
When solving for the static CV curve for a MOS capacitor, due to the absence of current carriers
When solving for the static CV curve for a MOS capacitor, due to the absence of current carriers, convergence can be a real problem. Previous methods suggested in the hints
23 years ago
IBIS Models Now Supported in SmartSpice
Expert Parametric Wire (Pwire) is a complex group of objects containing, a single wire named master wire, any number of subparts such as enclosure wires, offset wires and sets of
23 years ago
Extraction of SPICE Model Parameters from Atlas Device Simulation Using Utmost
Many users would like to extract SPICE models from their process and device simulation using Athena and Atlas to be used in actual circuit simulation without actually fabricating the device.
23 years ago
Array Copying – Alignment from Specified Instance Number
For LCD and Memory designs, Array Copy function on Gateway is conveniently used. Users may want to align instances from specified instance number, for example starting from X100 or X1000.
23 years ago
Hierarchical Layout versus Schematic
A new Hierarchical Layout versus Schematic (HLVS) system that provides significant improvement in verification of huge circuits is described. Other of LVS verification tools perform a netlist flattening and comparison
23 years ago
Design of Optimal Spiral Inductors in Expert
Introduction One of the key components in many RF ICs applications is the inductor. It is very important that the inductor has optimal design, meaning optimal geometry with the best
23 years ago
When I do an extract, the generated layers are present in the layout.
Q: When I do an extract, the generated layers are present in the layout. If I need to do layout modifications I find it very cumbersome to deal with the
23 years ago
Resistance Calculation Approach in Hipex-NET
Hipex-NET uses two techniques to calculate resistor values. First method of resistance extraction, which is usual for full chip netlist extractors and uses heuristic algorithms to recognize common shapes for
23 years ago
TCAD Simulation of a Dual Band Monolithic HgCdTe Infrared Photodetector
Introduction Mercury cadmium telluride (HgCdTe) is a semiconductor material whose material properties are adjustable through altering its constitutive molar fractions. HgCdTe has found extensive use in optical detection, and in
23 years ago
Mocasim – A Versatile Monte Carlo Simulator for III-Nitride Transport Properties
III-Nitrides have recently attracted attention as a promising material class for high-power, high-frequency microelectronic applications at elevated temperatures. They possess large band gaps, relatively small effective masses in the conduction