Testimonials

This article introduces a DPT-based simulation method to perform the transient switching characteristics of an IGBT device. It also provides standard templates for power device switching characteristics and performance assessment

• Section 1: Process Simulation – New Features in 2024 Baseline Release
• Section 2: Device Simulation – New Features in 2024 Baseline Release
• Section 3: Victory DoE – New

It is often the case that a design of experiments (DOE) is required to optimize the performance of a particular device. Sometimes this simply means tweaking the implant dose for

Recently a new diffusion model was introduced to Victory Process: the CMOS model. This model aims at taking on the challenges brought by the specificities of CMOS device processing such