Wide bandgap (WBG) devices like SiC and GaN promise major gains in efficiency and power consumption, but a single datasheet operating point can’t show how they behave under real high-frequency,
Gate-all-around nanosheet FETs give 2 nm-and-below nodes the electrostatic control they need, but they also multiply the process and structural parameters your team has to evaluate. Physics-based simulation is accurate,
Abstract Curvilinear mask shapes are moving into production at advanced nodes, and they stress correction, verification, and mask rule checking (MRC) flows built for rectilinear geometry. This webinar presents Silvaco’s
2 months ago
TCAD-Aware SPICE Model Extraction with Utmost IV: From Manufacturing to Surrogate Circuit Modeling Abstract Accurate compact models are essential for translating device behavior into trustworthy circuit simulation, but extracting a
Abstract: An IC’s optimal balance of power, performance, and area (PPA) depends on the target application, so building them from generic standard cell libraries inevitably leaves customer value unrealized. With
3 months ago
AI-Powered Surrogates: From Process Geometry to I‑V Curves Abstract Modern semiconductor development requires rapid exploration of large design spaces while maintaining the predictive accuracy of physics-based simulation. In this webinar,
4 months ago
Simulation of Plasma Chambers for Predictive Simulation of Semiconductor Manufacturing Process engineers, plasma chamber designers, and plasma device users are faced with the challenge of designing optimal geometric configurations, with
5 months ago
Registration Now Open
6 months ago
Archive Now Available
7 months ago
Archive Now Available
8 months ago
Archive Now Available
1 year ago
Archive Now Available