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Introduction Bias Temperature Instability (BTI) [1] ranks among the most serious reliability issues in present-day semiconductor devices. In pMOSFETs, for instance, it is observed when large negative biases are applied

Silvaco offers many alternatives for creating simple 3D structures, the optimum choice depending on what the user needs to simulate. Many of the choices for creating simple 3D structures are

Traditionally, visualizing vectors by means of arrows in TonyPlot was a challenge, especially in the areas where the computational grid was dense. The vector arrows were plotted for every grid

In a MOSFET structure, silicon carbide, 4H-SiC in particular, is known to exhibit lower channel mobility than Si, mainly due to Coulomb scattering at trapped charge at the SiO2/4H-SiC interface,

A soft error in the context of this article, can be defined as an unintended change in electrical state of a device or circuit, that has an origin, external to

Q: What Types of 3D Delaunay Shape Refinement can be used in Victory Process? A. The Victory Process cell mode Delaunay 3D device meshing algorithm already includes various TCAD-based local