14 years ago
The Extended Gaussian Disorder Model in Atlas
In this article the various enhancements to the organic device modeling that have been implemented recently in Atlas are presented. Following the description of the carrier statistics and the new
14 years ago
Simulation of Ion Beam Etching of Patterned Nanometer-scale Magnetic Structures for High-Density Storage Applications
Fabrication of various nano-structures often requires mask controlled or patterned etching of materials. The chemical or wet etch methods cannot be used for nanoscale geometries due to the substantial isotropic
14 years ago
State of the Art 3D SiC Process and Device Simulation
Silicon has long been the semiconductor of choice for high-voltage power electronics applications [1,2]. However, wide-bandgap semiconductors such as SiC have begun to attract attention because they are projected to
14 years ago
Calibration of the Ion Enhanced Chemical Etching Model of VICTORY Process Using Virtual Wafer Fab
In this article we describe a technique to automatically calibrate parameters of an Ion Enhanced Chemical Etching model implemented in the 3D process simulator VICTORY Process to measurements published in
14 years ago
Using VICTORY Process to Model the Effect of Silicon Substrate Orientation on Oxidation Kinetics
Different crystal planes of silicon are known to have different oxidation rates, e.g. the silicon plane with Miller indices is oxidized approximately 1.7 times faster then the plane [1][2]. During
14 years ago
A Semi-Empirical Model for the Simulation of Ion Milling in VICTORY Process
The three-dimensional process simulator VICTORY Process now includes a semi-empirical model for the simulation of ion milling. During ion milling, the mill (etch) rate depends in a complex way on
14 years ago
Developing Custom Etching/Deposition Models in VICTORY Process
VICTORY Process is supplied with a wide range of models and data for an extensive set of materials, so that you can simulate many process steps without the need to
14 years ago
Simulation of Stress Evolution During Semiconductor Device Fabrication
Accurate stress simulation has become a necessary part of performance and reliability analysis of semiconductor devices. In our previous paper [1] we demonstrated that 3D stress simulation of the whole
14 years ago
Actuation Voltage For a Cantilever Switch in MEMS
Following the successful 3D simulation of the process flow of cantilever based MEMS switches using VICTORY Process is presented in August 2005 Simulation Standard article “Process Flow Simulation and Manufacture”,
15 years ago
Current Collapse Phenomenon in GaN HFETs resulting from Intentional Bulk Iron (Fe) Doping and Un-intentional Interface Traps
The Gallium Nitride-based material family has fundamental material properties which make it an attractive candidate for semiconductor device fabrication. These properties include: High saturation velocities and breakdown field strength Direct