Simulation Standard

Victory Process supports mesh generation for device simulation using many common algorithms. The primary two are conformal and delaunay. A simple process simulation followed by an export will result in

The photovoltaics (PV) market represents the fastest growing renewable energy technology, with a 35% annual growth rate, which is projected to be worth $150B by 2018.[1] The global cumulative installed

VWF allows a curve as target for optimization. This feature greatly benefits the users who need to calibrate TCAD simulation against measured curve such as SIMS. VWF offers multiple ways

This document is a short guide on the new and existing support for export cropping/slicing in Victory Process cell mode. The cropping operation is useful to extract a segment of

Background: Victory Process is packaged with a wide range of etch models. Victory Process also supports an “Open Modelling Interface” (OMI). The OMI enables users to develop their own models

Irradiation by energetic particles can degrade semiconductor device performance. The particles involved can be electrons, positrons, neutrons, protons, alpha particles, heavy ions, or high-energy photons. As they pass through a

A reversed biased PIN diode acts as a radiation event detector, sensing the occurrence of an ionizing radiation pulse, which is connected to a threshold detector, the resistor RThreshold, that

Two fundamental damage mechanisms take place when devices are exposed to particle fluences: ionization and lattice displacement or just displacement damage. Ionization has previously been addressed in other simulation standard

The Simulation Standard article “Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage”1 gives a brief overview of the ways that ionizing radiation can affect semiconductor devices, and considers insulator charging in

It is often not realized that more than one Single Event Upset (SEU) statement can be used in a simulation. Each SEU statement can locate a strike anywhere in the