Simulation Standard

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

9 years ago

SmartSpice Shared Mode API

SmartSpice API, shared mode, was developed in order to provide an easy to use solution for products requiring the analog SPICE core engine as an integral part of their functionality.

9 years ago

Temperature Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors with a new Mobility Model

Amorphous In-Ga-Zn-O (a-IGZO), which is a typical amorphous oxide conductor (AOS), is considered to be one of the most promising channel materials of thin-film transistors (TFTs) for new flat-panel displays

9 years ago

Automated Stress Simulation Interface Between Victory Process and Device

Victory Process now includes the Victory Stress library directly within the process simulator, which removes the necessity to keep switching from process to stress simulators when invoking stress simulations at

9 years ago

TCAD Simulation of GaN-based Vertical FETs (HEMTs)

Gallium nitride (GaN)-based devices have entered the power electronics market and are showing excellent progress in the medium power conversion application [1]-[5]. For high-power conversion application, devices with vertical geometry

9 years ago

Calculating Failures In Time Rates for FinFET Circuits Using TCAD

In a previous article in Simulation Standard article entitled “Soft Error Simulations”, we discussed various ways to simulate soft errors using either TCAD, SPICE or a mixture of both. In

9 years ago

Optical Simulation of Liquid Crystals in the In-plane Switching Mode

Liquid Crystals (LCs) are widely used in the display technology due to the property of optical birefringence. Being sandwiched by two crossed polarizers, an LC medium will work as a

9 years ago

TCAD Simulations of TFET and Tunneling Diode

Researchers and designers are looking into a future of ultra-low power and ultra-low voltage (ULV) devices and designs. Portable devices, nodes, and sensors, energy harvesting are all examples of devices

9 years ago

TFT Panel Simulation Using SmartSpice Pro

TFT panels have already gained their undisputable reputation in a variety of professional and commercial applications. High quality, ease of customization, and comparably low manufacturing costs position these panels as

10 years ago

Model Extraction for Body-Biased XDMOS Devices

Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced. In addition to the regular threshold voltage increase with body bias, the LDD region of

10 years ago

Edge Effect Analysis on TFT Devices Using 3D Numerical Simulation

3D TFT analysis has been getting lots of attention due to issues caused by 3D effects such as the edge effect on the TFT characteristics. The presence of an enhanced