Casey Molver

Two fundamental damage mechanisms take place when devices are exposed to particle fluences: ionization and lattice displacement or just displacement damage. Ionization has previously been addressed in other simulation standard

The Simulation Standard article “Simulating Radiation-Induced Shifts in MOSFET Threshold Voltage”1 gives a brief overview of the ways that ionizing radiation can affect semiconductor devices, and considers insulator charging in

It is often not realized that more than one Single Event Upset (SEU) statement can be used in a simulation. Each SEU statement can locate a strike anywhere in the

Single Event Burnout in a diode, requires a specific set of circumstances to occur, since there is no intrinsic current gain in the device itself to amplify the currents created

The Victory Process cell mode Delaunay 3D device meshing algorithm already includes various TCAD-based local refinement algorithms to ensure accurate and robust device simulation. These include junction and interface distance

Q: I have an SEU beam in a 2D structure; the beam track is at an angle through the device. I don’t want to waste mesh by putting a fine

Calculation of light extraction efficiency or optical output coupling efficiency is often needed in simulating a light emitting device (LED) such as an organic LED (OLED). It is best to

Yes, TonyPlot has many various display and preference settings that users can adjust, transforming their simulation data into a high quality plot for use in publications.

Silicon carbide is expected to be an excellent device material as high voltage and low-loss power devices. Recently, SBD (Schottky Barrier Diode) and MOSFET based on silicon carbide have been

The main cause of operational degradation in MOS devices is believed to be due to the buildup of charge at the Silicon-Oxide interface. This leads to reduced saturation currents and