7 years ago
2019년 10월 11일 | 2:00am-2:30am (한국 시각) 반도체 기술이 발전함에 따라 on-chip 변동의 영향이 커지며, 이는 보다 정교한 솔루션이 필요하다는 것을 의미합니다. 따라서, 가능한 생산 시간 및 비관적인 관점을 줄이는
7 years ago
Diamond is considered to be the ultimate semiconductor material for high power and high frequency devices due to its superior electrical and thermal properties, such as high breakdown field, high
7 years ago
PowerAmerica’s strategic roadmap for next generation wide bandgap (WBG) power electronics (PE) came out earlier this year. The public version of the roadmap includes a background/introduction and market forecast pertaining
7 years ago
Abstract— A complete simulation flow for a Nanowire-based ring oscillator circuit is presented, where the active devices were simulated using an atomistic device simulator. The results of this simulation have
7 years ago
y first IC design back in 1978 was a DRAM and it ran on 12V, 5V and -5V, but then my second DRAM was using only a 5V supply. Today
7 years ago
Abstract—There are several device challenges unique to the select gate transistor in 3D NAND memory cell. It requires low leakage current to prevent read and program disturb problems and it
7 years ago
In this paper, in order to understand trap-rich substrate behavior, passive and active device on SOI with trap-rich layer structures were simulated using the Victory Device simulator. Harmonics distortion of
7 years ago
Introduction Diamond is considered to be the ultimate semiconductor material for high power and high frequency devices due to its superior electrical and thermal properties, such as high breakdown field,
7 years ago
I started out my engineering career by doing transistor-level circuit design and we used a proprietary SPICE circuit simulator. One thing that I quickly realized was that the accuracy of
7 years ago
A quick search of the IEEE Xplore online library gives a list of more than 230 published technical articles on Power Device Simulation using Silvaco TCAD. Here are some recent