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October 2017

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

9 years ago

이온 수송 및 전기 화학에 대한 TCAD 시뮬레이션

2017년 10월 26일 | 3:00am-3:30am (한국 시각) 이번 시간에 반도체 소자의 이온 수송과 전기 화학 시뮬레이션에 대해 논의합니다.

9 years ago

W-element Field Solvers

In connection with the reduction in the size of electronic elements and the increase in operating frequencies, it becomes necessary to transmit signals between the nodes of the circuit using

9 years ago

SmartSpice Shared Mode API

SmartSpice API, shared mode, was developed in order to provide an easy to use solution for products requiring the analog SPICE core engine as an integral part of their functionality.

9 years ago

Temperature Properties of Amorphous In-Ga-Zn-O Thin-Film Transistors with a new Mobility Model

Amorphous In-Ga-Zn-O (a-IGZO), which is a typical amorphous oxide conductor (AOS), is considered to be one of the most promising channel materials of thin-film transistors (TFTs) for new flat-panel displays

9 years ago

Automated Stress Simulation Interface Between Victory Process and Device

Victory Process now includes the Victory Stress library directly within the process simulator, which removes the necessity to keep switching from process to stress simulators when invoking stress simulations at

9 years ago

TCAD Simulation of GaN-based Vertical FETs (HEMTs)

Gallium nitride (GaN)-based devices have entered the power electronics market and are showing excellent progress in the medium power conversion application [1]-[5]. For high-power conversion application, devices with vertical geometry