Introduction As MOS field-effect transistors are scaled down to a nanometer regime, quantum effects in both transverse and transport directions start playing a major role in determining device characteristics. In

Abstract The paper presents a new approach to three-dimensional semiconductor process simulation that overcomes the problem of moving boundaries and mesh generation. Contrary to using unstructured meshes, the approach makes

Introduction In recent years, the investigation of Organic Light Emitting Diodes (OLEDs) and photovoltaic devices based on small organic molecules and polymers has attracted significant interest due to their potential

1. Introduction Organic semiconductors have been incorporated in a wide range of devices, including organic thin-film transistors (OTFTs) and circuits, organic solar cells, organic non-volatile memories and organic light-emitting diodes

Abstract This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small grains dimension. With the

In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain–current dispersion effects are investigated when gate or drain voltages are pulsed. Gate-lag and

Introduction The trend toward ultra-short gate length MOSFET requires a more and more effective control of the channel by the gate leading to new architecture like double-gate, tri-gate, omega-gate, and

How Can I significantly Reduce Circuit Parasitics Netlist Extraction Time?

Introduction It is widely believed that the scaling of standard Flash devices will face in a near future several limitations, due to the high voltage requirement of the program/erase and

Abstract In this paper we present an original semi-analytical model for the subthreshold electrical behavior of complex 3D structures as the SOI FinFLASH devices. This physically-based model, which does not