26 years ago
The low temperature operation of many device structures has been shown as an effective method for improving device performance without reducing device size. By modeling low temperature phenomena, numerical simulation
26 years ago
This article will present the simulation methodology of a self-aligned double-gate MOSFET structure (FinFET) using SILVACO 3-D simulation suite. The double-gate MOSFET is one of the most attractive alternative to
26 years ago
We analyze quantitatively the real impact of technology on the needed level for carrier transport modeling. The results, based on theoretical analyzes, are applied to existing devices. This work shows
26 years ago
The Atlas syntax is flexible enough to allow the definition of sinusoidal nodal voltages by defining them on the SOLVE statement line. To illustrate this the structure shown in Figure