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2018

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

9 years ago

Using TCAD to Reverse Engineer a 2N2222 BJT for Proton Damage Simulations

It is often the case, that an Engineer is required to simulate environmental effects on a device manufactured by a third party. In such an event, the first issue that

9 years ago

Optimization of PD-SOI CMOS Process and Devices for RF Applications

In recent years, radio-frequency (RF) CMOS on Silicon-on-Insulator (SOI) has rapidly evolved as a mainstream technology for switches used in wireless applications such as tuners and power amplifiers [1, 2].