Monthly Archives: April 2017

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April 2017

Know how your circuit behaves across process variation before silicon tells you, with Monte Carlo-accurate results up to 30X faster.

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9 years ago

信頼性解析は設計サイクルの初期に先手を打つ

このウェビナーでは、さまざまなタイプのIC開発において設計サイクルの初期段階に、シンプルで必要最小限の入力データを用いて、パワーおよびEM/IRドロップ解析を実行することにより、ロバスト性と使いやすさを保証するベスト・プラクティスを紹介します。

10 years ago

Model Extraction for Body-Biased XDMOS Devices

Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced. In addition to the regular threshold voltage increase with body bias, the LDD region of

10 years ago

Edge Effect Analysis on TFT Devices Using 3D Numerical Simulation

3D TFT analysis has been getting lots of attention due to issues caused by 3D effects such as the edge effect on the TFT characteristics. The presence of an enhanced

10 years ago

3D Simulation of Dual-Gate Thin Film Transistors

Dual-Gate Thin Film Transistors (DGTFTs) are often used in pixel driver and peripheral circuits for liquid crystal displays. This is because of the reduction of the gate-off state leakage current

10 years ago

Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD

The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE). With 20 nm advanced planar technology, the source and