10 years ago
このウェビナーでは、さまざまなタイプのIC開発において設計サイクルの初期段階に、シンプルで必要最小限の入力データを用いて、パワーおよびEM/IRドロップ解析を実行することにより、ロバスト性と使いやすさを保証するベスト・プラクティスを紹介します。
10 years ago
Compared with regular MOSFET devices, the body bias effect in HVMOS is usually more pronounced. In addition to the regular threshold voltage increase with body bias, the LDD region of
10 years ago
3D TFT analysis has been getting lots of attention due to issues caused by 3D effects such as the edge effect on the TFT characteristics. The presence of an enhanced
10 years ago
Dual-Gate Thin Film Transistors (DGTFTs) are often used in pixel driver and peripheral circuits for liquid crystal displays. This is because of the reduction of the gate-off state leakage current
10 years ago
The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE). With 20 nm advanced planar technology, the source and