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VP_Implant_ex02.in : Trench Implant at angle showing shadow effect

VP_Implant_ex02.in : Trench Implant at angle showing shadow effect

VP_Implant_ex02.in : Trench Implant at angle showing shadow effect

Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

  • 2D Diffusion & Implantation

This example demonstrates the shadow doping effect that occurs due to implant on a trench sidewall.

The effect is produced due to the deflection of ions hitting a sidewall (of trench or any hard mask) and landing on the substrate an angle. In this example, the implant is performed on a trench sidewall. The results show a low doped region on the trench-wall opposite to the implanted wall.

The example implants Boron with dose of 1e13/cm2 at an energy of 80 keV and tilt of 12 deg.

Images

VP_Implant_ex02_01.png

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