Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

• 3D Physical Etch & Deposit

This example demonstrates physical CMP simulation with an open model from the open etching / deposition model library.

List of key syntax:

INIT: Starts a simulation in process mode and defines the size of the simulation domain and the geometrical mesh resolution.

DEPOSIT: Deposits a layer of aluminum

ETCH: The following 3 ETCH statements create a pattern within the aluminum layer. between.x implicitly defines a mask pattern – etch between the 2 specifies (x-)positions right.to implicitly defines a mask pattern – etch right to the specified (x-)position left.to implicitly defines a mask pattern – etch left to the specified (x-)position material By specifying the parameter material you only etch the aluminum layer. The model DRY ensures that all sidewalls in the patterned structure are vertical.

DEPOSIT: Fill everything with material SiO2. This is then the input for the actual CMP process. The conformally deposited SiO2 layer shall be planarized by means of the CMP process.

ETCHDEPOPROPERTIES: Sets the maximal CMP rate for each material in the structure. Note: If you omit a material its maximal rate is zero.

REACTION: Selects the (surface reaction) model function cmp_physical2020 from the open etching/deposition model library to perform the CMP simulation. name assigns a name to this reaction model, which we can use later in the input deck.

dep defines which dependencies Victory Process shall hand over to this model function.

highestsurfacecoordinate … The z-coordinate of the highest point in the
structure

position … The x/y/z coordinate of the point where the etch rate is calculated by the model function cmp_physical2020

globalDishingRadius … The lateral distance from any of the highest surface points in the structure. Note that there can be several global maxima within the simulated structure

rate … The value set within the statement Etchdepoproperties which applies to the point where the etch rate is calculated by the model function cmp_physical2020 Note: The values of the dependencies can change from time step to time step.

param defines which parameters (values from the input deck) Victory Process shall hand over to this model function.

DISHEFFECT … How fast the CMP effect decay with the lateral distance from the maxima

CMPEFFECT … How fast the etch rate decreases with the vertical distance of a surface point from the maxima Note : The values of the parameters are set within the input deck and do not vary within the etching simulation

Info about the model: At the global maxima of the structure the etch rate is as set by the statement Etchdepoproperties. The etch rate decreases with the vertical (z-direction) distance of a surface point from the geometrical maxima. This is the CMP effect. On top of that this CMP effect decays with the lateral distance from the geometrical maxima.

TOPOGRAPHYMODEL: Connects the surface reaction model (see Reaction above statement) with a flux model. Since we do not take flux effects into account, we use the flux model constant here. Note: The flux model constant is one of the default flux models of Victory Process. Having the reactionmodel and the flux model connected, we have configured the CMP model. name assigns a name to this cmp model, which we can use later in the input deck reactionmodelname The reaction model which we connect with the flux model (see Reaction statement above) fluxmodelname The flux model which we connect with the reaction model

ETCH: Applies the previously defined and configured CMP model (see Topographymodel statement above).

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