Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Process

• 2D Physical Etch & Deposit

Victory Process supports a range of advanced physical etching models. This example provides an introduction to the syntax used for a range of these models.

This example includes:

-Anisotropic etching model: a machine is specified with a user defined etch rate (eg microns per minute) of the material. Here the nitride and the barrier material are both given etch rates. As such, the masked window will reduce as a rate of etch time, increasing the opening in the nitride. This examples also defines the RATIO in the machine model for both materials. This controls the lateral to vertical etch rate ratio. The machine is then activated for a certain amount of time.

-Primary Etch model: is a single particle model corresponding to the case where the spatial velocity distribution of the reactive particles is isotropic within the reactor. This means that the particles are approaching the wafer surface uniformly from all directions, as such shading effects can be observed when invoking such a model.

-Parametrized Primary: building on from the previous example, here the distribution of the reactive particles is controlled by the flux distribution function found in the ‘cosinepower’ C-function, which essentially controls focused the flux is around the vertical axis.

-RIE: Reactive Ion Etch model – The RIE model is a simplified model of combined etching by two types of particles, namely the chemical etching by a neutrals and the sputter etching by an ions.

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