Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Diffusion & Implantation
Victory Mesh
- 2D Remeshinig
Victory Device
- 2D Simulator
Victory Extract:
- Curve Extraction
- 2D Mesh Extraction
Vertical GaN devices, with their superior breakdwon voltages above 800v, have superior switching performances which are ideal for power devices. The simulation is based on a GaN 800V Aperture Vertical Electron Transistor (CAVET). The simulation builds a planar DMOS device then using a realistic doping profile using Monte-Carlo ion implantation. Key device characteristics such as threhold voltage, on-resistance, and breakdown voltage from the output transfer characteristics. The deck is ultimately used in Victory DoE to analyize trends in the threhold voltage, on-resistance, and breakdown voltage as the device parameters change.
References
[1] Chowdhury et. al, IEEE Electron Device Letters, Vol. 33, No. 1, January 2012
Images
