Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Device
- 2D Simulator
This example demonstrates TCAD computation of Id-Vd, Id-Vg, and transconductance gm-Vg characteristics of a gallium nitride (GaN) field-effect transistor (FET) called CAVET (Current Aperture Vertical Electron Transistor).
This example is based on the following reference paper:
[1] S. Chowdhury, M. H. Wong, B. L. Swenson, and U. K. Mishra, “CAVET on bulk GaN substrates achieved with MBE-regrown AlGaN/GaN layers to suppress dispersion “, IEEE Electron Device Letters, vol.33, Jan. 2012, pp.41-43.
This example demonstrates:
Construction of the Vertical GaN-FET structure using the device simulator syntax
Material and models parameter specification
Simulation of Id-Vg, gm-Vg, and Id-Vd characteristics
Display of the results
The device under consideration is a normally-on Vertical AlGaN/GaN HEMT of type CAVET (Current Aperture Vertical Electron Transistor). The main concept here is that the polarization charge is calculated using the built-in models as specified by the polarization parameter on the model statement.
First, the initial solution is obtained (for zero bias), which includes also calculation of the 2D Electron Gas (2DEG) sheet density.
Then, the Id-Vg transfer characteristics are computed, for several selected Vds voltages, from which the transconductance gm-Vg characteristics are extracted. Next, the Id-Vd output characteristics are computed, for several selected Vgs voltages.
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