Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- Core Simulator
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
In this example, a simple normally-on GaN HEMT structure is built using Victory Process. The structure contains a realistic T-shaped gate.
Using Victory Mesh, the necessary volume mesh is added to capture 2DEG properly created during electrical simulation.
In Victory Device, the transfer characteristics are simulated at drain voltage of 1V, sweeping gate from 0V to -6V. The 2DEG is obtained by defining the channel GaN region as “substrate ” using “region modify ” command in Victory Device which declares this layer as lattice relaxed.Then “Polarization polar.scale=0.8 ” parameter is used in “models ” statement to calculate the total polarization charge at GaN/AlGaN interface.
This transfer curve is used to further obtain the transconductance using the “extract ” command.
And finally the family of curves are produced by sweeping the drain from 0V to 15V at different gate voltages.
Images
