Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 2D Stress
Victory Mesh
- 2D Meshing
Victory Device
- 2D Simulator
In this example, a 2D GaN HEMT structure with the stress distribution resulting from intrinsic stress in the nitride passivation layer is produced by Victory Process in process mode. The process files are then imported into Victory Device for device simulation of IdVg characteristics.
For stress simulation in Victory Process, the STRESS.HIST parameter of the METHOD statement must be activated as follows: METHOD STRESS.HIST=ON
With this settings Victory Process calculates the stresses and evolutions of geometry after each processing step using the so-called “stress evolution ” or “stress history ” model.
Intrinsic stress can be introduced into the nitride passivation layer during the deposition using the parameters STRESSXX and STRESSZZ of the DEPOSIT statement for the xx-component and the zz-component of the stress tensor. The default unit of intrinsic stress is dyne/cm2.
The IdVg characteristics at a drain bias of 1 V are ramped from -6 to 0.0 V.
The effect of nitride intrinsic stress, which can be either compressive or tensile, is visible on IdVg characteristics.
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