Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.

Required Modules

Victory Mesh

• 3D Meshing

In this example a nanosheet FET is modelled using implicit intersections to define the sheets. This is a fast and simple technique for quick emulation of a device. The example begins with a layered structure that includes the source, gate and drain regions as blocks of material. Note that the gas and polysilicon (gate) regions contain more edges than the source and drain regions.

The intersection command is then used to insert the nanosheets using a superquadric that is uniform in the x-axis. The number of edges defined in the regions that the superquadric intersects was chosen to ensure sufficient sampling of the given expressions.

The final device is remeshed using the Delaunay algorithm. The fields and electrodes are then applied as normal, and a final device mesh is saved.

Images