Every software package contains a full set of examples suitable for that version and are installed with the software. If you see examples here that are not in your installation you should consider updating to a later version of the software. These examples can be used by beginners and advanced users for product evaluation, teaching purposes, and self-training.
Required Modules
Victory Process
- 3D Diffusion & Implantation
Victory Mesh
- 3D Meshing
Victory Device
- 3D Simulator
In this example, a FinFET is created using the etch, deposit, diffusion and Monte-Carlo implantation modules of Victory Process.
The structure created by Victory Process is then meshed in Victory Mesh using a full 3D Delaunay mesh and is then transferred to Victory Device for electrical analysis of the unsaturated Vt curves as well IdVd curves
The device simulation uses the energy balance model to account for the effects of ballistic carrier transport, which significantly increases drain currents and is the cause of the decrease in the output impedance of the IdVd curves.
It also uses the Bohm Quantum Potential (BQP) model to take into account quantum confinement of carriers in 3 dimension which significantly decreases the drain currents.
For comparison purpose, simulations with just Drift Diffusion are also included.
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