PG-Fig7-29.in : 28 nm MOS reverse short channel effect (RSCE)

PG-Fig7-29.in : 28 nm MOS reverse short channel effect (RSCE)

PG-Fig7-29.in : 28 nm MOS reverse short channel effect (RSCE)

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Required Modules

Victory Process

  • 2D Diffusion & Implantation

Victory Mesh

  • 2D Meshing

Victory Device

  • 2D Simulator

From “Integrated Circuit Fabrication: Science and Technology by Plummer & Griffin, published by Cambridge University Press

The reverse short channel effect is caused by point defect gradients driving
unusual uphill dopant diffusion. This gives rise to an anomalous increase in
threshold voltage at short channel lengths, in contrast to the usual decrease
in threshold voltage due to short channel effects.

Images

PG-Fig7-29_final.png
PG-Fig7-29-01.png
PG-Fig7-29.png

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